全文获取类型
收费全文 | 201篇 |
免费 | 4篇 |
国内免费 | 12篇 |
专业分类
化学 | 159篇 |
晶体学 | 2篇 |
力学 | 5篇 |
综合类 | 1篇 |
物理学 | 50篇 |
出版年
2023年 | 4篇 |
2022年 | 1篇 |
2020年 | 2篇 |
2019年 | 2篇 |
2017年 | 4篇 |
2016年 | 3篇 |
2015年 | 5篇 |
2014年 | 5篇 |
2013年 | 9篇 |
2012年 | 7篇 |
2011年 | 14篇 |
2010年 | 10篇 |
2009年 | 15篇 |
2008年 | 14篇 |
2007年 | 9篇 |
2006年 | 13篇 |
2005年 | 12篇 |
2004年 | 6篇 |
2003年 | 7篇 |
2002年 | 12篇 |
2001年 | 8篇 |
2000年 | 9篇 |
1999年 | 11篇 |
1998年 | 3篇 |
1997年 | 2篇 |
1996年 | 1篇 |
1995年 | 3篇 |
1994年 | 3篇 |
1993年 | 1篇 |
1992年 | 1篇 |
1991年 | 8篇 |
1990年 | 4篇 |
1989年 | 1篇 |
1988年 | 3篇 |
1984年 | 1篇 |
1980年 | 1篇 |
1979年 | 1篇 |
1976年 | 1篇 |
1966年 | 1篇 |
排序方式: 共有217条查询结果,搜索用时 15 毫秒
1.
In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 °C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 °C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering. 相似文献
2.
K. M. A. Salam Hidekazu Konishi Masahiro Mizuno Hisashi Fukuda Shigeru Nomura 《Applied Surface Science》2002,190(1-4):88-95
Polycrystalline (1−x)Ta2O5−xTiO2 thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO2 layer was formed at the (1−x)Ta2O5−xTiO2/Si interface. Thin films with 0.92Ta2O5–0.08TiO2 composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×1011 cm−2 eV−1, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm2 was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10−9 A/cm2 up to an applied electric field of 6 MV/cm. 相似文献
3.
4.
5.
The mixed‐valent oxotantalate Eu1.83Ta15O32 was prepared from a compressed mixture of Ta2O5 and the metals in a sealed Ta ampoule at 1400 °C. The crystal structure was determined by means of single crystal X‐ray diffraction: space group R3¯, a = 777.2(6) pm and c = 3523.5(3) pm, Z = 3, 984 symmetrically independent reflections, 83 variables, RF = 0.027 for I > 2σ (I). The structure is isotypic to Ba2Nb15O32. The salient feature is a [Ta(+8/3)6O12iO6a] cluster consisting of an octahedral Ta6 core bonded to 12 edge‐bridging inner and six outer oxygen atoms. The clusters are arranged to slabs which are sandwiched by layers of [Ta(+5)3O13] triple octahedra. Additional Ta(+5) and Eu(+2) atoms provide the cohesion of these structural units. Twelve‐fold coordinated Eu(+2) atoms are situated on a triply degenerate position 33 pm displaced from the threefold axis of symmetry. A depletion of the Eu(+2) site from 6 to 5.5 atoms per unit cell reduces the number of electrons available for Ta‐Ta bonding from 15 to 14.67 electrons per cluster. Between 125 and 320 K Eu1.83Ta15O32 is semi‐conducting with a band gap of 0.23 eV. The course of the magnetization is consistently described with the Brillouin function in terms of a Mmol/(NAμB) versus B/T plot in the temperature range 5 K — 320 K and at magnetic flux densities 0.1 T — 5 T. At moderate flux densities (< 1 T) the magnetic moment agrees fairly well with the expected value of 7.94 μB for free Eu (2+) ions with 4f7 configuration in 8S7/2 ground state. Below 5 K, anisotropic magnetization measurements at flux densities B < 1 T point to an onset of an antiferromagnetic ordering of Eu spins within the layers and an incipient ferromagnetic ordering perpendicular to the layers. 相似文献
6.
Michele Sacerdoti Maria Chiara Dalconi Barbara Cavicchi Stefano Colonna 《Journal of solid state chemistry》2004,177(6):1781-1788
Sol-gel routes were used to prepare Ta 10 at% and Nb 5 at% and 10 at% doped titania nanosized powders. When fired between 410°C and 850°C the doped titania powders are in the anatase phase; further heating up to 1050°C is required to obtain the rutile phase. The presence of dopant atoms delays the rate of transformation as compared with pure titania powders. Doping also affects the rate of grain growth and increases the conductance response to gas. To better understand the role played by dopant atoms in inhibiting both phase transformation to rutile and grain growth, X-ray Absorption Spectroscopy measurements were performed at the LIII-LI absorption edges of Ta and Nb K absorption edge. Analysis was restricted to the anatase phase because the transformation to rutile phase, obtained by firing at 1050°C, is accompanied by the formation of undesired Ta and Nb oxides (Ta2O5 and Nb2TiO7, respectively). Extended X-ray Absorption Fine Structure and X-ray Absorption Near-Edge Spectroscopy analysis results indicate that in nanostructured anatase both tantalum and niobium atoms substitute Ti cations with +5 valence state. 相似文献
7.
A family of tantalum compounds supported by the triaryloxide [R-L]3− ligands are reported [H3(R-L) = 2,6-bis(4-methyl-6-R-salicyl)-4-tert-butylphenol, where R = Me or tBu]. The reaction of H3[Me-L] with TaCl5 in toluene gave [(Me-L)TaCl2]2 (1). The [tBu-L] analogue [(tBu-L)TaCl2]2 (2) was synthesized via treatment of TaCl5 with Li3[tBu-L]. A THF solution of LiBHEt3 was added to 1 in toluene to provide [(Me-L)TaCl(THF)]2 (3), while treatment of 2 with 2 equiv of LiBHEt3 or potassium in toluene followed by recrystallization from DME resulted in formation of [M(DME)3][{(tBu-L)TaCl}2(μ-Cl)] [M = Li (4a), K (4b)]. When the amount of MBHEt3 (M = Li, Na, K) was increased to 5 equiv, the analogous reactions in toluene afforded [{(bit-tBu-L)Ta}2(μ-H)3M] [M = Li(THF)2 (5a), Na(DME)2 (5b), K(DME)2 (5c)]. During the course of the reaction, the methylene CH activation of the ligand took place. Dissolution of 5a in DME produced [{(bit-tBu-L)Ta}2(μ-H)3Li(DME)2] (6), indicating that the coordinated THF molecules are labile. When the 2/LiBHEt3 reaction was carried out in THF, the ring opening of THF occurred to yield [(tBu-L)Ta(OBun)2]2 (7) along with a trace amount of [Li(THF)4][{(tBu-L)TaCl}2(μ-OBun)] (8). Treatment of 2 with potassium hydride in DME yielded [{(tBu-L)TaCl2K(DME)2}2(μ-OCH2CH2O)] (9), in which the ethane-1,2-diolate ligand arose from partial C-O bond rupture of DME. The X-ray crystal structures of 2, 3, 4, 5a, 6, 7, and 9 are described. 相似文献
8.
报导用激光直接溅射的方法产生了大量的钽硫原子团簇离子Ta_nS_m~+(n≤9, m≤30),并用串级飞行时间质谱仪研究了所产生团簇离子的组成及紫外激光裂解规律。实验发现, 最稳定的团簇正离子往往具有Ta_nS_(2n+7)~+(n=1,2,…9)的组成, 相应的负离子具有, Ta_nS_(2n+3)~-(n=1,2,…9)的组成。各种团簇正离子的激光裂解的主要通道是连续的S_2消除过程, 且对于n=3,4,5的团簇, 主要光解产物还有Ta_3S_4~+或Ta_4S_6~+离子。据此推测出Ta_nS_m~+团簇离子的可能结构为在Ta原子周围有6个左右的S原子配位。Ta原子之间不存在直接的化学键,而较大团簇可能是以Ta_3S_4或Ta_4S_6为核心的结构。 相似文献
9.
Maurits Kuiper Manfred Speldrich Helmut Schilder Prof. Dr. Heiko Lueken 《无机化学与普通化学杂志》2012,638(10):1432-1436
Abstract. The magnetic behavior of the mononuclear nd1 systems MCp2Cl2 (M = V4+[3d1], Nb4+[4d1], Ta4+[5d1], space group P21/c, pseudosymmetry of the molecules C2v) deviates from pure single ion spin magnetism on account of ligand field effect (Hlf), spin‐orbit coupling (Hso), and intermolecular spin‐spin exchange interactions (Hex). For both VCp2Cl2 and NbCp2Cl2 excellent adaptations to the measured susceptibility data were obtained (2 K ≤ T ≤ 300 K) on the basis of spectroscopic data (lf, so) and cooperative metal–metal interactions (ex) of antiferromagnetic nature [molecular field model (mf)]. For TaCp2Cl2 experimental term structure data are not available. Therefore, Jørgensen's spectroscopical series (g‐factor of the central ion) was applied to extrapolate the data set for TaCp2Cl2. Hlf, Hso, and Hex (antiferromagnetic) increase in the order 3d1 → 4d1 → 5d1 leading, with rising atomic number of the metals, to a distinct enhancement of the magnetic anisotropy. At 4 K the μeff components μeff,y (oriented perpendicular to the cg–M–cg plane; “cg” = center of gravity of the Cp ring), μeff,z (oriented along the twofold pseudoaxis), and μeff,x are 1.73, 1.69, 1.68 (V), 1.73, 1.62, 1.59 (Nb), and 1.71, 1.59, 1.49 (Ta). While μeff,y is independent of T, both μeff,z and μeff,x decrease with decreasing T. 相似文献
10.
Steffen Blaurock Thomas Koch Olaf Kühl Peter Lönnecke Felicite Majoumo René Sommer 《Phosphorus, sulfur, and silicon and the related elements》2013,188(6-7):1451-1456
Substituted bifunctional phosphorus-based ligands HX(CRR') n PR"H (or -PR" 2 ) [where X = O, S, NR', (substituted) cyclopentadienyl; n = 1, 2, 3; R, R', R" = alkyl, aryl, H] were employed as bridging ligands in the synthesis of early/late bridged transition metal complexes. Synthetic routes to the bifunctional ligands were also developed. First, mononuclear complexes, such as [TpZr(OCH 2 PPh 2 ) 3 ] (Tp = trispyrazolylborato), [Cp 2 Zr(1-O-2-PHR-C 6 H 10 )(Me)] (R = 2,4,6-Pr i 3 C 6 H 2 (Tipp)), [Cp 2 Zr(SCH 2 CH 2 PHR) 2 ] (R = Ph, Mes, Tipp), and phosphinoferrocene derivatives, were prepared. These complexes are suitable precursors for the introduction of a second metal (as in, for example, [TpZr( w -OCH 2 PPh 2 ) 3 Mo(CO) 3 ]). 相似文献